Азиатско-Тихоокеанский рынок SiC силовых полупроводников – тенденции отрасли и прогноз до 2030 года

Анализ и размер рынка SiC-силовых полупроводников в Азиатско-Тихоокеанском регионе

Силовые полупроводники SiC являются наиболее распространенными полупроводниками и считаются лучшим выбором для электроники. Эти силовые полупроводники SiC применяются в бытовом, коммерческом и промышленном секторах, а также в различных других областях. Силовые полупроводники SiC доступны в двух типах устройств, таких как дискретные устройства SiC и SiC bare crystal. Благодаря технологическому прогрессу распространенность дискретных устройств SiC растет быстрее. Существенным свойством силовых полупроводников SiC являются высокие теплопроводные свойства наряду с различными другими, которые эффективно используют электроэнергию. Силовые полупроводники SiC используются в телекоммуникациях, энергетике и электроэнергетике, возобновляемой генерации энергии и в ряде других мест. Силовые полупроводники SiC используются в силовой электронике, приобретая все большую популярность среди людей. Спрос на силовые полупроводники SiC на рынке силовых полупроводников SiC в Азиатско-Тихоокеанском регионе растет более быстрыми темпами. Для этого различные участники рынка представляют новые продукты и формируют партнерство для расширения своего бизнеса на рынке силовых полупроводников SiC в Азиатско-Тихоокеанском регионе.

Data Bridge Market Research анализирует, что рынок SiC силовых полупроводников Азиатско-Тихоокеанского региона, как ожидается, достигнет значения 4 058 305,08 тыс. долларов США к 2030 году, при среднегодовом темпе роста 25,9% в течение прогнозируемого периода. Отчет о рынке SiC силовых полупроводников Азиатско-Тихоокеанского региона также всесторонне охватывает анализ цен, патентный анализ и технологические достижения.

Market Definition

SiC power semiconductor refers to the type of semiconductor that contains carbon and silicon and operates at very high voltage and temperature. SiC power semiconductors can be used in producing a strong as well as a very hard material. SiC power semiconductors can be implemented in various sectors such as telecommunication, energy and power, automotive, renewable power generation, and in different other areas. They are basically considered due to higher maximum thermal conductive properties that have widened the area of application. SiC power semiconductors are devices that are considered high-frequency power devices that are majorly applicable in wireless communications. SiC semiconductor offers ten times the dielectric breakdown field strength, three times the thermal conductivity, and three times the bandgap as compared to a silicon semiconductor. The SiC semiconductor has taken over the market because of its high performance and efficiency. The SiC power semiconductor offers to work at high voltage and current and offers low on-resistance in addition to being efficient at high temperatures. The combination of silicon carbide has thus proved to be a better and optimum choice of semiconductor.

Asia-Pacific SiC Power Semiconductor Market Dynamics

This section deals with understanding the market drivers, advantages, opportunities, restraints, and challenges. All of this is discussed in detail below:

Drivers

• Advent Of SiC Power Semiconductors

There are very useful properties of SiC as a semiconductor material. In applications such as inverters, motor drives, and battery chargers, silicon carbide (SiC) devices offer many advantages, such as improved power density, reduced cooling requirements, and reduced overall system cost. These advantages are enough to make SiC power semiconductors at the high efficient stage.

The energy lost by SiC during the reverse recovery phase is only 1% of the energy lost by silicon which creates a huge difference in the efficiency of the material. The virtual absence of a tail current allows a faster turn‑off, and it makes lower losses. Since there is less energy to dissipate, a SiC device able to switch at higher frequencies and improve efficiency. The more efficient, small size, and lower weight of SiC as compared to other materials can create a higher-rated solution or a smaller design with reduced cooling requirements. Thus, the advent of SiC power semiconductors is a major factor expected to drive the growth of the Asia-Pacific SiC power semiconductor market.

• Rising Penetration of Electronic Vehicles

The world is changing so fast, and it is turning towards renewable energy. All sectors, market players, and government institutes are making more focus to build electric vehicle infrastructure and generate more demand for electric vehicles.

As per the information from International Energy Agency (IEA), 16.5 million electric cars were on the road in 2021, a tripling in just three years, and this is a big number as compared to 2020. Electric car sales increased and doubled in China, continued to increase in Europe, and picked up in the U.S.  in 2021. This data shows that there is a tremendous increase in the penetration of EVs in the market, which may positively affect the environment as well as the Asia-Pacific SiC power semiconductor market. SiC is highly efficient at high voltages, enabling fast battery charging times that are comparable to filling the tank of conventional vehicles. Silicon carbide power electronics are enabling a surge in 800-volt drive systems, paving the way for lighter EVs with greater range.

Opportunity

• Strategic Partnership and Acquisition by SiC Manufacturers

There are various organizations and market players which are creating strategic partnerships and acquisitions. This partnership creates a huge positive impact on the growth of the Asia-Pacific SiC power semiconductor market. This collaboration results in cooperation, becoming a low-cost route for new competitors to gain technology and market access.

 A joint venture involves two or more businesses pooling their resources and expertise to achieve a particular goal. There are many organizations that collaborate with each other's and create a positive impact on the growth of the Asia-Pacific SiC power semiconductor market.

Restraint/Challenge

• Issues Related With SiC Wafer Manufacturing

A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. There is a lot of fabrication challenge faced by SiC wafer manufacturers. The main defects that can occur during the manufacturing of SiC substrates are crystalline stacking faults, micro pipes, pits, scratches, stains, and surface particles. These factors are adversely affecting the performance of SiC devices which have been detected more frequently on 150-mm wafers than on 100-mm wafers. This is because SiC is the third-hardest composite material in the world and is also very fragile, and its production poses complex challenges related to cycle time, cost, and dicing performance. It is effective to predict that even switching to 200-mm wafers will entail significant issues. In fact, it will be necessary to guarantee the same quality of the substrate, facing an inevitably higher density of defects.

Post-COVID-19 Impact on Asia-Pacific SiC Power Semiconductor Market

The SiC power semiconductor industry noted a gradual decrease in demand due to the lockdown and COVID-19 governmental laws, as manufacturing facilities and services were closed. Even private and public development was called off. Moreover, the industry was also affected by the halt of the supply chain, especially of raw materials used in the manufacturing process of SiC power semiconductors. Stringent government regulations for different industries and restrictions on trade & transportation were some of the top factors that caused a dent in the growth of the market for SiC power semiconductors around the world in 2020 and in the first two quarters of 2021. As the SiC power semiconductor production slowed down owing to the restrictions by governments across the globe, the production was not meeting the demand in the first three quarters of 2020. Moreover, high demand/requirement for SiC power semiconductor products in the automotive and defense industry, in the medical sector, and in hydraulics applications has been witnessed. The resumption of production of the oil and gas industry and automotive; further fuelled the rising demand for SiC power semiconductors across the globe. Thus, this not only led to a hike in demand but also increased the cost of the product.

Recent Developments

• In December 2022, STMicroelectronics and Soitec (Euronext Paris), in designing and manufacturing innovative semiconductor materials, announced the next stage of their cooperation on Silicon Carbide (SiC) substrates, with the qualification of Soitec's SiC substrate technology by ST planned over the next 18 months. The goal of this cooperation is the adoption by ST of Soitec's SmartSiC technology for its future 200mm substrate manufacturing, feeding its devices and modules manufacturing business, with volume production expected in the midterm. This collaboration will help the company to boost its financials as well as the growth of the Asia-Pacific SiC power semiconductor market.
• In July 2022, Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regard to the implementation of silicon carbide (SiC) inside power modules. Recently, ROHM's latest 4th generation of SiC MOSFETs has been fully qualified in SEMIKRON's eMPack modules for automotive use. Hence, both companies serve worldwide customers' needs. This collaboration enhanced the company's financials and made a positive impact on the growth of the Asia-Pacific SiC power semiconductor market.

Asia-Pacific SiC Power Semiconductor Market Scope

The Asia-Pacific SiC power semiconductor market is segmented on the basis of type, voltage range, wafer size, wafer type, application, and vertical. The growth amongst these segments will help you analyze meager growth segments in the industries and provide the users with a valuable market overview and market insights to help them make strategic decisions for identifying core market applications.

By Type

• MOSFETS
• Hybrid Modules
• Schottky Barrier Diodes (SBDS)
• IGBT
• Bipolar Junction Transistor (BJT)
• Pin Diode
• Junction FET (JFET)
• Others

On the basis of type, the Asia-Pacific SiC power semiconductor market is segmented into MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET) and others.

By Voltage Range

• 301-900 V
• 901-1700 V
• Above 1701 V

On the basis of voltage range, the Asia-Pacific SiC power semiconductor market is segmented into 301-900 V, 901-1700 V, and above 1701 V.

By Wafer Size

• 6 Inch
• 4 Inch
• 2 Inch
• Above 6 Inch

On the basis of wafer size, the Asia-Pacific SiC power semiconductor market is segmented into 6 Inch, 4 Inch, 2 Inch, and above 6 Inch.

By Wafer Type

• SiC epitaxial wafers
• Blank SiC wafers

On the basis of the wafer type, the Asia-Pacific SiC power semiconductor market is segmented into SiC epitaxial wafers and blank SiC wafers.

By Application

• Electric Vehicles (EV)
• Photovoltaics
• Power supplies
• Industrial motor drives
• EV charging infrastructure
• RF Devices
• Others

On the basis of the application, the Asia-Pacific sic power semiconductor market is segmented into electric vehicles (EV), photovoltaics, power supplies, industrial motor drives, EV charging infrastructure, RF devices, and others.

By Vertical

• Automotive
• Utilities and energy
• Промышленный
• Транспорт
• ИТ и телекоммуникации
• Бытовая электроника
• Аэрокосмическая и оборонная промышленность
• Коммерческий
• Другие

По вертикали рынок силовых полупроводников SiC в Азиатско-Тихоокеанском регионе сегментируется на автомобилестроение, коммунальное хозяйство и энергетику, промышленность, транспорт, ИТ и телекоммуникации, бытовую электронику, аэрокосмическую и оборонную промышленность, коммерцию и другие.

Региональный анализ/информация о рынке SiC-силовых полупроводников в Азиатско-Тихоокеанском регионе

Проведен анализ рынка силовых полупроводников SiC в Азиатско-Тихоокеанском регионе, а также предоставлены сведения о размерах рынка и тенденциях по регионам, типам, диапазонам напряжений, размерам пластин, типам пластин, областям применения и вертикалям, как указано выше.

В отчете о рынке силовых полупроводников SiC в Азиатско-Тихоокеанском регионе рассматриваются следующие страны: Япония, Китай, Южная Корея, Индия, Австралия и Новая Зеландия, Гонконг, Тайвань, Сингапур, Таиланд, Индонезия, Малайзия, Филиппины, Вьетнам и остальные страны Азиатско-Тихоокеанского региона.

Ожидается, что в 2023 году Китай будет доминировать на рынке силовых полупроводников SiC в Азиатско-Тихоокеанском регионе благодаря размеру своего внутреннего рынка электроники, а его статус производственной базы для целых отраслей, как ожидается, станет движущим фактором роста рынка.

В разделе отчета, посвященном региону, также приводятся отдельные факторы, влияющие на рынок, и изменения в регулировании рынка, которые влияют на текущие и будущие тенденции рынка. Такие данные, как анализ цепочки создания стоимости вверх и вниз по течению, технические тенденции и анализ пяти сил Портера, тематические исследования, являются некоторыми из указателей, используемых для прогнозирования рыночного сценария для отдельных стран. Кроме того, при предоставлении прогнозного анализа данных региона рассматриваются наличие и доступность брендов Азиатско-Тихоокеанского региона и их проблемы, связанные с большой или малой конкуренцией со стороны местных и отечественных брендов, влияние внутренних тарифов и торговые пути.

Анализ конкурентной среды и доли рынка силовых полупроводников SiC в Азиатско-Тихоокеанском регионе

Конкурентная среда рынка SiC силовых полупроводников в Азиатско-Тихоокеанском регионе содержит сведения о конкурентах. Включены сведения о компании, финансах компании, полученном доходе, рыночном потенциале, инвестициях в исследования и разработки, новых рыночных инициативах, присутствии в Азиатско-Тихоокеанском регионе, производственных площадках и объектах, производственных мощностях, сильных и слабых сторонах компании, запуске продукта, широте и широте продукта и доминировании в применении. Приведенные выше данные относятся только к фокусу компаний, связанному с рынком SiC силовых полупроводников в Азиатско-Тихоокеанском регионе.

Некоторые из основных игроков, работающих на рынке силовых полупроводников SiC в Азиатско-Тихоокеанском регионе, включают WOLFSPEED, INC., STMicroelectronics, ROHM CO., LTD., Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, Texas Instruments Incorporated, Infineon Technologies AG, Semikron Danfoss, Xiamen Powerway Advanced Material Co., Ltd., Renesas Electronics Corporation, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Microchip Technology Inc., Semiconductor Components Industries, LLC, NXP Semiconductors, UnitedSiC, SemiQ Inc., Littlefuse, Inc., Allegro MicroSystems, Inc., Hitachi Power Semiconductor Device, Ltd. (дочерняя компания Hitachi Group) и GeneSiC Semiconductor Inc. и другие.

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