Global SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others) Industry Trends and Forecast to 2030.
SiC Power Semiconductor Market Analysis and Size
SiC power semiconductors are the most prevalent semiconductors and are considered the best choice for electronics. These SiC power semiconductors are applied in domestic, commercial, and industrial sectors and various other areas. SiC power semiconductors are available in two types of devices, such as SiC discrete devices and SiC bare die. Due to technological advancements, the prevalence of SiC discrete devices has been increasing faster. The SiC power semiconductor' significant property is high thermal conductive properties along with various others that efficiently use electricity. SiC power semiconductors are used in telecommunication, energy and power, renewable power generation, and several other places. SiC power semiconductors are used in power electronics gaining prevalence among individuals. The demand for SiC power semiconductors in the global SiC power semiconductor market is increasing at a higher rate. For this, various market players are introducing new products and forming a partnership to expand their business in the global SiC power semiconductor market.
Data Bridge Market Research analyses that the global SiC power semiconductor market is expected to reach a value of USD 7,030,515.23 thousand by 2030, at a CAGR of 26.0% during the forecast period. The global SiC power semiconductor market report also comprehensively covers pricing analysis, patent analysis, and technological advancements.
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Report Metric
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Details
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Forecast Period
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2023 to 2030
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Base Year
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2022
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Historic Years
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2021 (Customizable to 2020-2016)
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Quantitative Units
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Revenue in USD Thousand, Volumes in Units, Pricing in USD
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Segments Covered
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By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, Above 6 Inch), Wafer type (SiC Epitaxial Wafers, Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others).
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Regions Covered
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U.S., Canada, Mexico, Germany, U.K., Italy, France, Spain, Switzerland, Netherlands, Belgium, Russia, Turkey, Poland, Sweden, Denmark, Rest of Europe, Japan, China, South Korea, India, Australia and New Zealand, Hong Kong, Taiwan, Singapore, Thailand, Indonesia, Malaysia, Philippines, Vietnam, and Rest of Asia-Pacific, South Africa, UAE., Israel, Egypt, Qatar, Saudi Arabia, Kuwait, Rest of the Middle East and Africa, Brazil, Argentina, and Rest of South America.
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Market Players Covered
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WOLFSPEED, INC., STMicroelectronics, ROHM CO., LTD., Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, Texas Instruments Incorporated, Infineon Technologies AG, Semikron Danfoss, Xiamen Powerway Advanced Material Co., Ltd., Renesas Electronics Corporation, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Microchip Technology Inc., Semiconductor Components Industries, LLC, NXP Semiconductors, UnitedSiC, SemiQ Inc., Littlefuse, Inc., Allegro MicroSystems, Inc., Hitachi Power Semiconductor Device, Ltd. (A Subsidiary of Hitachi Group), and GeneSiC Semiconductor Inc. among others.
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Market Definition
SiC power semiconductor refers to the type of semiconductor that contains carbon and silicon and operates at very high voltage and temperature. SiC power semiconductors can be used in producing a strong as well as a very hard material. SiC power semiconductors can be implemented in various sectors such as telecommunication, energy and power, automotive, renewable power generation, and in different other areas. They are basically considered due to higher maximum thermal conductive properties that have widened the area of application. SiC power semiconductors are devices that are considered high-frequency power devices that are majorly applicable in wireless communications. SiC semiconductor offers ten times the dielectric breakdown field strength, three times the thermal conductivity, and three times the bandgap as compared to a silicon semiconductor. The SiC semiconductor has taken over the market because of its high performance and efficiency. The SiC power semiconductor offers to work at high voltage and current and offers low on-resistance in addition to being efficient at high temperatures. The combination of silicon carbide has thus proved to be a better and optimum choice of semiconductor.
Global SiC Power Semiconductor Market Dynamics
This section deals with understanding the market drivers, advantages, opportunities, restraints, and challenges. All of this is discussed in detail below:
Drivers
- Advent Of SiC Power Semiconductors
There are very useful properties of SiC as a semiconductor material. In applications such as inverters, motor drives, and battery chargers, silicon carbide (SiC) devices offer many advantages, such as improved power density, reduced cooling requirements, and reduced overall system cost. These advantages are enough to make SiC power semiconductors at the high efficient stage.
The energy lost by SiC during the reverse recovery phase is only 1% of the energy lost by silicon which creates a huge difference in the efficiency of the material. The virtual absence of a tail current allows a faster turn‑off, and it makes lower losses. Since there is less energy to dissipate, a SiC device able to switch at higher frequencies and improve efficiency. The more efficient, small size, and lower weight of SiC as compared to other materials can create a higher-rated solution or a smaller design with reduced cooling requirements. Thus, the advent of SiC power semiconductors is a major factor expected to drive the growth of the Global SiC power semiconductor market.
- Rising Penetration of Electronic Vehicles
The world is changing so fast, and it is turning towards renewable energy. All sectors, market players, and government institutes are making more focus to build electric vehicle infrastructure and generate more demand for electric vehicles.
As per the information from International Energy Agency (IEA), 16.5 million electric cars were on the road in 2021, a tripling in just three years, and this is a big number as compared to 2020. Electric car sales increased and doubled in China, continued to increase in Europe, and picked up in the U.S. in 2021. This data shows that there is a tremendous increase in the penetration of EVs in the market, which may positively affect the environment as well as the Global SiC power semiconductor market. SiC is highly efficient at high voltages, enabling fast battery charging times that are comparable to filling the tank of conventional vehicles. Silicon carbide power electronics are enabling a surge in 800-volt drive systems, paving the way for lighter EVs with greater range.
Opportunity
- Strategic Partnership and Acquisition by SiC Manufacturers
There are various organizations and market players which are creating strategic partnerships and acquisitions. This partnership creates a huge positive impact on the growth of the Global SiC power semiconductor market. This collaboration results in cooperation, becoming a low-cost route for new competitors to gain technology and market access.
A joint venture involves two or more businesses pooling their resources and expertise to achieve a particular goal. There are many organizations that collaborate with each other's and create a positive impact on the growth of the Global SiC power semiconductor market.
Restraint/Challenge
- Issues Related With SiC Wafer Manufacturing
A SiC wafer is a semiconductor material that has excellent electrical and thermal properties. It is a high-performance semiconductor that is ideal for a wide variety of applications. In addition to its high thermal resistance, it also features a very high level of hardness. There is a lot of fabrication challenge faced by SiC wafer manufacturers. The main defects that can occur during the manufacturing of SiC substrates are crystalline stacking faults, micro pipes, pits, scratches, stains, and surface particles. These factors are adversely affecting the performance of SiC devices which have been detected more frequently on 150-mm wafers than on 100-mm wafers. This is because SiC is the third-hardest composite material in the world and is also very fragile, and its production poses complex challenges related to cycle time, cost, and dicing performance. It is effective to predict that even switching to 200-mm wafers will entail significant issues. In fact, it will be necessary to guarantee the same quality of the substrate, facing an inevitably higher density of defects.
Post-COVID-19 Impact on Global SiC Power Semiconductor Market
The SiC power semiconductor industry noted a gradual decrease in demand due to the lockdown and COVID-19 governmental laws, as manufacturing facilities and services were closed. Even private and public development was called off. Moreover, the industry was also affected by the halt of the supply chain, especially of raw materials used in the manufacturing process of SiC power semiconductors. Stringent government regulations for different industries and restrictions on trade & transportation were some of the top factors that caused a dent in the growth of the market for SiC power semiconductors around the world in 2020 and in the first two quarters of 2021. As the SiC power semiconductor production slowed down owing to the restrictions by governments across the globe, the production was not meeting the demand in the first three quarters of 2020. Moreover, high demand/requirement for SiC power semiconductor products in the automotive and defense industry, in the medical sector, and in hydraulics applications has been witnessed. The resumption of production of the oil and gas industry and automotive; further fuelled the rising demand for SiC power semiconductors across the globe. Thus, this not only led to a hike in demand but also increased the cost of the product.
Recent Developments
- In December 2022, STMicroelectronics and Soitec (Euronext Paris), in designing and manufacturing innovative semiconductor materials, announced the next stage of their cooperation on Silicon Carbide (SiC) substrates, with the qualification of Soitec's SiC substrate technology by ST planned over the next 18 months. The goal of this cooperation is the adoption by ST of Soitec's SmartSiC technology for its future 200mm substrate manufacturing, feeding its devices and modules manufacturing business, with volume production expected in the midterm. This collaboration will help the company to boost its financials as well as the growth of the Global SiC power semiconductor market.
- In July 2022, Semikron Danfoss and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regard to the implementation of silicon carbide (SiC) inside power modules. Recently, ROHM's latest 4th generation of SiC MOSFETs has been fully qualified in SEMIKRON's eMPack modules for automotive use. Hence, both companies serve worldwide customers' needs. This collaboration enhanced the company's financials and made a positive impact on the growth of the Global SiC power semiconductor market.
Global SiC Power Semiconductor Market Scope
The global SiC power semiconductor market is segmented on the basis of type, voltage range, wafer size, wafer type, application, and vertical. The growth amongst these segments will help you analyze meager growth segments in the industries and provide the users with a valuable market overview and market insights to help them make strategic decisions for identifying core market applications.
By Type
- MOSFETS
- Hybrid Modules
- Schottky Barrier Diodes (SBDS)
- IGBT
- Bipolar Junction Transistor (BJT)
- Pin Diode
- Junction FET (JFET)
- Others
On the basis of type, the global SiC power semiconductor market is segmented into MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET) and others.
By Voltage Range
- 301-900 V
- 901-1700 V
- Above 1701 V
On the basis of voltage range, the global SiC power semiconductor market is segmented into 301-900 V, 901-1700 V, and above 1701 V.
By Wafer Size
- 6 Inch
- 4 Inch
- 2 Inch
- Above 6 Inch
On the basis of wafer size, the global SiC power semiconductor market is segmented into 6 Inch, 4 Inch, 2 Inch, and above 6 Inch.
By Wafer Type
- SiC epitaxial wafers
- Blank SiC wafers
On the basis of the wafer type, the global SiC power semiconductor market is segmented into SiC epitaxial wafers and blank SiC wafers.
By Application
- Electric Vehicles (EV)
- Photovoltaics
- Power supplies
- Industrial motor drives
- EV charging infrastructure
- RF Devices
- Others
On the basis of the application, the global sic power semiconductor market is segmented into electric vehicles (EV), photovoltaics, power supplies, industrial motor drives, EV charging infrastructure, RF devices, and others.
By Vertical
- Automotive
- Utilities and energy
- Industrial
- Transportation
- IT and telecommunication
- Consumer electronics
- Aerospace and defense
- Commercial
- Others
On the basis of the vertical, the global SiC power semiconductor market is segmented into automotive, utilities and energy, industrial, transportation, IT and telecommunication, consumer electronics, aerospace and defense, commercial, and others.
Global SiC Power Semiconductor Market Regional Analysis/Insights
The global SiC power semiconductor market is analyzed, and market size insights and trends are provided by region, type, voltage range, wafer size, wafer type, application, and vertical as referenced above.
The countries covered in the global SiC power semiconductor market report are U.S., Canada, Mexico, Germany, U.K., Italy, France, Spain, Switzerland, Netherlands, Belgium, Russia, Turkey, Poland, Sweden, Denmark, Rest of Europe, Japan, China, South Korea, India, Australia and New Zealand, Hong Kong, Taiwan, Singapore, Thailand, Indonesia, Malaysia, Philippines, Vietnam, and Rest of Asia-Pacific, South Africa, UAE., Israel, Egypt, Qatar, Saudi Arabia, Kuwait, Rest of the Middle East and Africa, Brazil, Argentina, and Rest of South America.
In 2023, the Asia-Pacific region is expected to dominate the global SiC power semiconductor market due to the high demand for SiC power semiconductors. Additionally, the high demand for power modules and related devices is expected to act as a driving factor for the market's growth.
The region section of the report also provides individual market-impacting factors and changes in market regulation that impact the current and future trends of the market. Data points like downstream and upstream value chain analysis, technical trends, and porter's five forces analysis, case studies are some of the pointers used to forecast the market scenario for individual countries. Also, the presence and availability of global brands and their challenges faced due to large or scarce competition from local and domestic brands, the impact of domestic tariffs, and trade routes are considered while providing forecast analysis of the region data.
Competitive Landscape and Global SiC Power Semiconductor Market Share Analysis
The global SiC power semiconductor market competitive landscape provides details by the competitor. Details included are company overview, company financials, revenue generated, market potential, investment in research and development, new market initiatives, global presence, production sites and facilities, production capacities, company strengths and weaknesses, product launch, product width and breadth, and application dominance. The above data points provided are only related to the companies' focus related to the global SiC power semiconductor market.
Some of the major players operating in the global SiC power semiconductor market are WOLFSPEED, INC., STMicroelectronics, ROHM CO., LTD., Fuji Electric Co., Ltd., Mitsubishi Electric Corporation, Texas Instruments Incorporated, Infineon Technologies AG, Semikron Danfoss, Xiamen Powerway Advanced Material Co., Ltd., Renesas Electronics Corporation, TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION, Microchip Technology Inc., Semiconductor Components Industries, LLC, NXP Semiconductors, UnitedSiC, SemiQ Inc., Littlefuse, Inc., Allegro MicroSystems, Inc., Hitachi Power Semiconductor Device, Ltd. (A Subsidiary of Hitachi Group), and GeneSiC Semiconductor Inc. among others.
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