世界の窒化ガリウム（GaN）無線周波数（RF）半導体市場の規模、シェア、トレンド分析レポート – 業界の概要と2031年までの予測

窒化ガリウム（GaN）無線周波数（RF）半導体市場分析

窒化ガリウム（GaN）無線周波数（RF）半導体市場は、高出力および高周波アプリケーションへの変革的な影響により、大幅な成長を遂げています。GaN RF半導体は、優れた電力処理能力、効率、熱伝導性により、通信、レーダーシステム、衛星通信でますます利用されています。5Gテクノロジーの急速な進歩と高性能通信システムの需要の高まりは、市場拡大を促進する主な要因です。通信では、GaN RFデバイスが信号強度とシステムパフォーマンスを向上させ、5Gインフラストラクチャのより広範な展開に貢献しています。同様に、防衛および航空宇宙アプリケーションに使用されるレーダーシステムでは、高出力および高周波数で動作するGaNの能力が、パフォーマンスと信頼性の点で重要な利点を提供します。高度な衛星通信システムへの重点が高まっていることも、市場の成長をさらに後押ししています。これは、GaNの効率と高出力が堅牢な衛星運用に不可欠であるためです。 

窒化ガリウム（GaN）無線周波数（RF）半導体市場規模

世界の窒化ガリウム（GaN）無線周波数（RF）半導体市場規模は、2023年に10億5,000万米ドルと評価され、2024年から2031年の予測期間中に20.10％のCAGRで成長し、2031年には45億5,000万米ドルに達すると予測されています。市場価値、成長率、セグメンテーション、地理的範囲、主要プレーヤーなどの市場シナリオに関する洞察に加えて、Data Bridge Market Researchがまとめた市場レポートには、詳細な専門家の分析、地理的に表された企業別の生産と生産能力、販売業者とパートナーのネットワークレイアウト、詳細で最新の価格動向分析、サプライチェーンと需要の不足分析も含まれています。

窒化ガリウム（GaN）無線周波数（RF）半導体市場の動向

「再生可能エネルギーソリューションへの注目の高まり」

The heightened focus on renewable energy solutions and the integration of smart grid technologies is creating significant opportunities for GaN RF semiconductors. As the world shifts towards more sustainable energy sources, there is an increasing demand for advanced components that can efficiently manage and convert energy. GaN RF semiconductors, with their superior power density and efficiency, are well-suited for applications in energy management systems and power conversion. These semiconductors play a crucial role in optimizing the performance of renewable energy systems, such as solar and wind power, by enabling efficient power amplification and signal processing.  For instance, in January 2024, Transphorm Inc. introduced two new 650V SuperGaN devices, the TP65H035G4YS and TP65H050G4YS, both packaged in a 4-lead TO-247 package (TO-247-4L). These FETs feature on-resistances of 35mΩ and 50mΩ, respectively, and include a Kelvin-source terminal designed to optimize switching performance while minimizing energy losses.

This advancement in GaN technology significantly benefits renewable energy solutions by improving the efficiency and reliability of power management systems. The low on-resistance of these FETs reduces conduction losses, which is crucial for energy conversion applications where minimizing power loss is essential. This means that renewable energy systems, such as solar inverters and wind turbines, can operate more efficiently, translating to better performance and higher energy yields.

Report Scope and Gallium Nitride (GaN) Radio Frequency (RF) Semiconductor Market Segmentation

Gallium Nitride (GaN) Radio Frequency (RF) Semiconductor Market Definition

Gallium nitride (GaN) radio frequency (RF) semiconductors are advanced electronic components used in RF and microwave applications. GaN is a wide-bandgap semiconductor material known for its high efficiency and high power density. GaN RF semiconductors are crucial in modern electronics, contributing to advancements in various high-performance and high-power applications.            

Gallium Nitride (GaN) Radio Frequency (RF) Semiconductor Market Dynamics

Drivers 

• Advancements in 5G Technology

The deployment of 5G networks is significantly driving the demand for high-performance RF components, such as gallium nitride (GaN) semiconductors. 5G systems require RF components that can deliver both high power and efficiency to meet their demanding performance criteria. GaN semiconductors are well-suited for this role due to their ability to handle high frequencies and power levels, making them crucial for the development and deployment of 5G infrastructure. As 5G technology continues to expand globally, the need for advanced GaN RF components grows, fueling market demand and spurring further innovation in semiconductor technologies.

• Growth in Satellite Communication

The growth in satellite communication is a key driver for the increased demand for high-efficiency and high-power RF components, including GaN semiconductors. Satellite communication systems rely on robust RF components to ensure reliable and high-performance operations in challenging environments. GaN RF semiconductors offer superior power density and efficiency, making them ideal for use in satellite communication systems where performance and reliability are critical. As the demand for advanced satellite communication capabilities rises, the need for GaN RF components is expected to grow, driving further advancements and investment in the technology.

Opportunities

• Development of Next-Generation Radar Systems

The advancement of next-generation radar systems, particularly in the defense and aerospace sectors, presents a significant opportunity for GaN RF semiconductors. These radar systems demand high-power and high-frequency RF components to deliver enhanced performance and capabilities. GaN semiconductors are well-suited to meet these requirements due to their ability to operate efficiently at high power levels and frequencies. As radar technology evolves and the need for more advanced systems grows, GaN RF components will play a crucial role, driving innovation and market growth in this sector.

• Development of New GaN Technologies

The development of new GaN technologies offers promising opportunities for enhancing performance and reducing costs in the GaN RF semiconductor market. Innovations in GaN materials and manufacturing processes can lead to improvements in the efficiency, power density, and overall performance of GaN components. These advancements can also help lower production costs, making GaN RF semiconductors more accessible and appealing to a broader range of applications. As technology continues to evolve, ongoing research and development in GaN technologies will drive market growth and expand the potential applications for these advanced semiconductor solutions.

Restraints/Challenges

• High Manufacturing Costs

The complex manufacturing process of GaN RF semiconductors contributes to their high production costs, which can be a significant barrier to market adoption. The intricate techniques required to produce GaN components, along with the specialized equipment and materials involved, result in elevated costs compared to traditional semiconductor technologies. This high cost can be particularly challenging in cost-sensitive markets where budget constraints limit the adoption of advanced GaN RF solutions.

• Limited Availability of Raw Materials

The availability of raw materials, such as gallium, which is essential for the production of GaN semiconductors, poses a challenge to the market. Gallium is a relatively rare element, and its limited availability can impact supply chains and increase production costs for GaN RF components. This scarcity can lead to price volatility and supply constraints, affecting the overall market dynamics.

This market report provides details of new recent developments, trade regulations, import-export analysis, production analysis, value chain optimization, market share, impact of domestic and localized market players, analyses opportunities in terms of emerging revenue pockets, changes in market regulations, strategic market growth analysis, market size, category market growths, application niches and dominance, product approvals, product launches, geographic expansions, technological innovations in the market. To gain more info on the market contact Data Bridge Market Research for an Analyst Brief, our team will help you take an informed market decision to achieve market growth.

Global Gallium Nitride (GaN) Radio Frequency (RF) Semiconductor Market Scope

The market is segmented on the basis of material, application, and end-users. The growth amongst these segments will help you analyze meagre growth segments in the industries and provide the users with a valuable market overview and market insights to help them make strategic decisions for identifying core market applications.

Material

• GaN-On-SiC
• GaN-On-Silicon
• GaN-On-Diamond

Application

• Wireless Infrastructure
• Power Storage
• Satellite Communication
• PV Inverter
• Others

End-Users

• Aerospace & Defense
• IT & Telecom
• Consumer Electronics
• Automotive
• Others

Global Gallium Nitride (GaN) Radio Frequency (RF) Semiconductor Market Regional Analysis

The market is analyzed and market size insights and trends are provided by country, material, application, and end-users as referenced above.

The countries covered in the market are U.S., Canada, Mexico, Germany, France, U.K., Netherlands, Switzerland, Belgium, Russia, Italy, Spain, Turkey, rest of Europe, China, Japan, India, South Korea, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, rest of Asia-Pacific, Saudi Arabia, U.A.E., South Africa, Egypt, Israel, rest of Middle East and Africa, Brazil, Argentina, and rest of South America.

North America is expected to dominate the market due to the substantial increase in the usage of semiconductor devices across the region. The presence of numerous high-tech industries, including telecommunications, defense, and aerospace, has spurred a strong demand for advanced RF components. The region's robust infrastructure, coupled with significant investments in research and development, fosters an environment ripe for the adoption and innovation of GaN RF semiconductors.         

Asia-Pacific is expected to be the fastest growing due to the rising prevalence of manufacturing companies in the region. The rapid industrialization and expansion of the electronics manufacturing sector in countries such as China, Japan, and South Korea are key factors contributing to this growth. The region's burgeoning electronics and telecommunications industries are increasingly adopting GaN RF semiconductors to enhance the performance of their RF systems. 

レポートの国別セクションでは、市場の現在および将来の傾向に影響を与える国内市場における個別の市場影響要因と規制の変更も提供しています。下流および上流のバリュー チェーン分析、技術動向、ポーターの 5 つの力の分析、ケース スタディなどのデータ ポイントは、個々の国の市場シナリオを予測するために使用される指標の一部です。また、国別データの予測分析を提供する際には、グローバル ブランドの存在と可用性、および地元および国内ブランドとの競争が激しいか少ないために直面​​する課題、国内関税と貿易ルートの影響も考慮されます。

窒化ガリウム（GaN）無線周波数（RF）半導体の世界市場シェア

市場競争環境では、競合他社の詳細が提供されます。含まれる詳細には、会社概要、会社の財務状況、収益、市場の可能性、研究開発への投資、新しい市場への取り組み、世界的なプレゼンス、生産拠点と施設、生産能力、会社の強みと弱み、製品の発売、製品の幅と広さ、アプリケーションの優位性などがあります。提供される上記のデータ ポイントは、市場に関連する会社の焦点にのみ関連しています。

窒化ガリウム (GaN) 無線周波数 (RF) 半導体市場のリーダー企業は次のとおりです。

• 住友電気工業株式会社（日本）
• RTX（米国）
• STマイクロエレクトロニクス（スイス）
• 三菱電機株式会社（日本）
• インフィニオンテクノロジーズAG（ドイツ）
• ルネサスエレクトロニクス株式会社（日本）
• パナソニック株式会社（日本）
• マイクロチップテクノロジー社（米国）
• エーテルコム（米国）
• Qorvo, Inc.（米国）
• スカイワークスソリューションズ社（米国）
• ウルフスピード社（米国）
• MACOM（米国）
• NXPセミコンダクターズ（オランダ）
• RFHIC株式会社（韓国）
• STマイクロエレクトロニクス（スイス）

窒化ガリウム（GaN）無線周波数（RF）半導体市場の最新動向

• 2024年4月、GaNパワー半導体の大手プロバイダーであるTransphorm, Inc.は、Weltrend Semiconductor Inc.と提携して、2つの新しいGaNシステムインパッケージ（SiP）を発売しました。WT7162RHUG24CとWT7162RHUG24Bと呼ばれる新しいSiPは、Weltrendの高度な高周波マルチモード（QR / Valley Switching）フライバックPWMコントローラーと、Transphormの480 mΩと150 mΩのSuperGaN FETをそれぞれ統合しています。
• 2024年3月、エフィシエント・パワー・コンバージョン・コーポレーションは、100Vで市場で最も低いオン抵抗（わずか1mΩ）を備えた革新的な窒化ガリウム（GaN）電界効果トランジスタ（FET）であるEPC2361を発表しました。この進歩により、EPCの以前の製品と比較して電力密度が2倍になることが期待されます。EPC2361は、標準RDS（オン）が1mΩで、露出した上部を備えた熱強化QFNパッケージに収められており、コンパクトな3mm x 5mmのフットプリントを占有します。

SKU-56367