Marché mondial des dispositifs d’alimentation GaN – Tendances et prévisions de l’industrie jusqu’en 2028

Analyse et perspectives du marché : Marché mondial des dispositifs d'alimentation GaN

Le marché des dispositifs d'alimentation GaN devrait connaître une croissance du marché à un taux de 49,95 % au cours de la période de prévision de 2021 à 2028. Le rapport d'étude de marché de Data Bridge sur le marché des dispositifs d'alimentation GaN fournit une analyse et des informations sur les différents facteurs qui devraient prévaloir tout au long de la période de prévision tout en fournissant leurs impacts sur la croissance du marché.  

Les transistors en nitrure de gallium (GaN) sont devenus une alternative aux performances améliorées des transistors à base de silicium, en raison de leur capacité à construire des dispositifs plus denses pour une valeur de résistance et une tension de claquage supposées par rapport aux dispositifs en silicium.

Les principaux facteurs qui devraient stimuler la croissance du marché des dispositifs de puissance GaN au cours de la période de prévision sont la vaste génération de revenus provenant des secteurs verticaux de l'électronique grand public et de l'automobile et la propriété de large bande interdite du matériau GaN qui soutient l'innovation. En outre, la
réussite du GaN dans l'électronique de puissance RF, l'augmentation de l'acceptation et l'adoption croissante des dispositifs de puissance RF GaN dans les secteurs verticaux militaire, de défense et aérospatial propulsent davantage la croissance du marché des dispositifs de puissance GaN.

D'autre part, la lutte des dispositifs SiC dans les applications d'alimentation haute tension devrait encore entraver la croissance du marché des dispositifs d'alimentation GaN au cours de la période à venir. En outre, l'utilisation potentielle du GaN dans les applications d'infrastructure 5G
dans les véhicules électriques et hybrides offrira de nouvelles opportunités lucratives pour la croissance du marché des dispositifs d'alimentation GaN dans les années à venir. Cependant, l'augmentation des prix des matériaux et de la construction ainsi que les tâches et difficultés de conception pourraient encore remettre en cause la croissance du marché des dispositifs d'alimentation GaN dans un avenir proche.

This GaN power device market report provides details of new recent developments, trade regulations, import export analysis, production analysis, value chain optimization, market share, impact of domestic and localised market players, analyses opportunities in terms of emerging revenue pockets, changes in market regulations, strategic market growth analysis, market size, category market growths, application niches and dominance, product approvals, product launches, geographic expansions, technological innovations in the market. To gain more info on the GaN power device market contact Data Bridge Market Research for an Analyst Brief, our team will help you take an informed market decision to achieve market growth.                                                              

GaN Power Device Market Scope and Market Size

The GaN power device market is segmented on the basis of device type, voltage range, application, vertical, technology, wafer material and wafer size. The growth among segments helps you analyse niche pockets of growth and strategies to approach the market and determine your core application areas and the difference in your target markets. 

• On the basis of device type, the GaN power device market is segmented into power device, RF power device, GaN power modules, GaN power discrete devices, GaN power ICs. Power device is further sub segmented into discrete power device and integrated power device. RF power device is further sub segmented into discrete RF power device and integrated RF power device. GaN power discrete devices is further sub segmented into GaN power non-RF devices and GaN power RF devices. GaN power ICs is further sub segmented into MMIC and hybrid.
• On the basis of voltage range, the GaN power device market is segmented into <200 volt, 200–600 volt, >600 volt),
• On the basis of application, the GaN power device market is segmented into power drives, supply and inverter, radio frequency. Power drives is further sub segmented into EV drives, industrial drives and light detection and ranging. Supply and inverter is further sub segmented into switch-mode power supply, inverter, wireless charging and EV charging. Radio frequency is further sub segmented into radio frequency front-end module, repeater/booster/das and radar and satellite.
• On the basis of vertical, the GaN power device market is segmented into telecommunications, industrial, automotive, renewable, consumer and enterprise, military, defense and aerospace, medical.
• On the basis of technology, the GaN power device market is segmented into 4h-SIC MOSFET, HEMT, others.
• On the basis of wafer material, the GaN power device market is segmented into GaN SiC, GaN Si.
• On the basis of wafer size, the GaN power device market is segmented into less than 150mm, 150mm-500mm, more than 500 mm.

GaN Power Device Market Country Level Analysis

The GaN power device market is analysed and market size, volume information is provided by country, device type, voltage range, application, vertical, technology, wafer material and wafer size as referenced above.   

The countries covered in the GaN power device market report are the U.S., Canada and Mexico in North America, Brazil, Argentina and Rest of South America as part of South America, Germany, Italy, U.K., France, Spain, Netherlands, Belgium, Switzerland, Turkey, Russia, Rest of Europe in Europe, Japan, China, India, South Korea, Australia, Singapore, Malaysia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC)  in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA).  

North America dominates the GaN power device market due to the rise in the investments by the defense and aerospace sector in the research and development. Furthermore, the increase in the acceptance of energy effective devices and offering contracts to several companies that are functioning which will further boost the growth of the GaN power device market in the region during the forecast period. Asia Pacific is projected to observe significant amount of growth in the GaN power device market due to the swift technological developments that are leading to the augmented demand for effective and high-performance RF components. Moreover, a substantial increase in the acceptance of wireless electronic devices and the production of telecommunication infrastructure is further anticipated to propel the growth of the GaN power device market in the region in the coming years.

The country section of the report also provides individual market impacting factors and changes in regulation in the market domestically that impacts the current and future trends of the market. Data points like down-stream and upstream value chain analysis, technical trends and porter's five forces analysis, case studies are some of the pointers used to forecast the market scenario for individual countries. Also, the presence and availability of global brands and their challenges faced due to large or scarce competition from local and domestic brands, impact of domestic tariffs and trade routes are considered while providing forecast analysis of the country data.

Competitive Landscape and GaN Power Device Market Share Analysis

The GaN power device market competitive landscape provides details by competitor. Details included are company overview, company financials, revenue generated, market potential, investment in research and development, new market initiatives, regional presence, company strengths and weaknesses, product launch, product width and breadth, application dominance. The above data points provided are only related to the companies’ focus related to GaN power device market.

Français Les principaux acteurs couverts dans le rapport sur le marché des dispositifs d'alimentation GaN sont Cree, Inc., Infineon Technologies AG, Qorvo, Inc., MACOM, Microsemi, Mitsubishi Electric Corporation, Efficient Power Conversion Corporation., GaN Systems, Navitas Semiconductor., Toshiba Electronic Devices & Storage Corporation, Exagan., VisIC Technologies, Integra Technologies, Inc., Transphorm Inc., GaNpower, Analog Devices, Inc., Panasonic Corporation, Texas Instruments Incorporated., Ampleon, Northrop Grumman, Dialog Semiconductor, entre autres acteurs nationaux et mondiaux. Les données sur les parts de marché sont disponibles séparément pour le monde, l'Amérique du Nord, l'Europe, l'Asie-Pacifique (APAC), le Moyen-Orient et l'Afrique (MEA) et l'Amérique du Sud. Les analystes de DBMR comprennent les atouts concurrentiels et fournissent une analyse concurrentielle pour chaque concurrent séparément.

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