Marché mondial des semi-conducteurs de puissance GaN et SiC – Tendances et prévisions de l’industrie jusqu’en 2031

GaN and SiC Power Semiconductor Market Analysis and Size

SiC and GaN power semiconductor devices play a pivotal role in enhancing the efficiency and reliability of power conversion systems. They are utilized in inverters and converters for solar photovoltaic (PV) and wind power systems, leveraging their superior characteristics such as higher operating temperatures, faster switching speeds, and lower switching losses compared to traditional silicon-based devices. GaN and SiC power semiconductor market enable more efficient power conversion, reducing energy losses and enhancing overall system performance, thereby facilitating the integration of renewable energy into the grid.

Global GaN and SiC power semiconductor market size was valued at USD 596.06 million in 2023 and is projected to reach USD 4,877.23 million by 2031, with a CAGR of 30.05% during the forecast period of 2024 to 2031. In addition to the insights on market scenarios such as market value, growth rate, segmentation, geographical coverage, and major players, the market reports curated by the Data Bridge Market Research also include in-depth expert analysis, geographically represented company-wise production and capacity, network layouts of distributors and partners, detailed and updated price trend analysis and deficit analysis of supply chain and demand.

Report Scope and Market Segmentation       

Market Definition

GaN (Gallium Nitride) and SiC (Silicon Carbide) are advanced materials used in power semiconductor devices. They enable higher efficiency and power density compared to traditional silicon-based semiconductors, making them ideal for applications such as power supplies, electric vehicles, and renewable energy systems.

GaN and SiC Power Semiconductor Market Dynamics

Drivers

• Rising Demand for Higher Efficiency Increases the Adoption of GaN and SiC Power Semiconductor

Industries across automotive, renewable energy, and consumer electronics sectors seek power semiconductor solutions that minimize energy losses and enhance overall system performance. GaN and SiC devices offer significantly higher efficiency compared to traditional silicon-based counterparts, making them increasingly attractive for applications requiring energy savings and improved efficiency. Their ability to operate at higher frequencies and temperatures while maintaining efficiency aligns with the growing trend towards more compact and power-dense electronic systems. As a result, the demand for GaN and SiC power semiconductors continues to rise across various industries seeking to optimize energy usage and reduce operational costs.

• GaN and SiC Power Semiconductor Companies grow due to Rising Adoption of Electric Vehicles

As the automotive industry transitions towards electric propulsion, there is a growing demand for power electronics solutions that offer higher efficiency and performance. GaN and SiC power semiconductors, developed by leading power semiconductor companies, enable EV manufacturers to develop vehicles with longer driving ranges, faster charging times, and more efficient powertrain systems. Their ability to handle higher temperatures and voltages while minimizing energy losses makes them ideal for EV applications, driving their adoption in onboard chargers, inverters, and motor drives. This increasing demand from the EV sector is fueling the growth of the GaN and SiC power semiconductor market.

Opportunities

• Expansion of Power Density Promotes Adoption of GaN and SiC Power Semiconductors

As industries strive for smaller and more compact electronic devices, the demand for higher power density solutions has intensified. GaN and SiC power semiconductors excel in this regard due to their ability to operate at higher frequencies, voltages, and temperatures while maintaining efficiency. Their superior characteristics enable the development of smaller and lighter power electronics systems without compromising performance, making them essential components in applications such as electric vehicles, renewable energy systems, and consumer electronics. Thus, the quest for increased power density is a significant driver fueling the growth of the GaN and SiC power semiconductor market.

• Rising Advancements in Manufacturing Processes Promotes Expansion of Power Semiconductors

Continuous improvements in fabrication techniques, epitaxial growth methods, and packaging technologies are leading to enhanced performance, higher yields for these semiconductor devices. As manufacturing becomes more efficient and cost-effective, the barriers to entry for adopting GaN and SiC technology are lowered, encouraging wider adoption across industries. Moreover, advancements enable the production of devices with improved reliability and thermal management, addressing key concerns in high-power applications such as electric vehicles, renewable energy systems, and industrial motor drives. Overall, these advancements are catalyzing the proliferation of GaN and SiC power semiconductors, fueling market expansion and innovation.

Restraints/Challenges

• High Manufacturing Cost Limits the Adoption of GaN and SiC Power Semiconductor

The fabrication processes for GaN and SiC devices involve specialized equipment, complex epitaxial growth techniques, and stringent quality control measures, leading to elevated production expenses. These high costs limit the scalability of manufacturing and can result in relatively expensive end products, making GaN and SiC solutions less competitive compared to traditional silicon-based alternatives in some applications.

• Limited Availability of High-Quality Substrates Hampers the Growth GaN and SiC Power Semiconductor

GaN and SiC require specialized substrates for epitaxial growth, and the supply of these substrates is constrained by factors such as production capacity and material quality. Limited substrate availability can lead to supply chain disruptions, increased production costs, and delays in product development. Additionally, competition for substrates among different industries further exacerbates the challenge, hindering the scalability of GaN and SiC device manufacturing and impeding their broader adoption in various applications.

This market, report provides details of new recent developments, trade regulations, import-export analysis, production analysis, value chain optimization, market share, impact of domestic and localized market players, analyses opportunities in terms of emerging revenue pockets, changes in market regulations, strategic market growth analysis, market size, category market growths, application niches and dominance, product approvals, product launches, geographic expansions, technological innovations in the market. To gain more info on the market, contact data bridge market research for an analyst brief, our team will help you take an informed market decision to achieve market growth.

Impact and Current Market Scenario of Raw Material Shortage and Shipping Delays

Data Bridge Market Research offers a high-level analysis of the market and delivers information by keeping in account the impact and current market environment of raw material shortage and shipping delays. This translates into assessing strategic possibilities, creating effective action plans, and assisting businesses in making important decisions.

Apart from the standard report, we also offer in-depth analysis of the procurement level from forecasted shipping delays, distributor mapping by region, commodity analysis, production analysis, price mapping trends, sourcing, category performance analysis, supply chain risk management solutions, advanced benchmarking, and other services for procurement and strategic support.

Expected Impact of Economic Slowdown on the Pricing and Availability of Products

When economic activity slows, industries begin to suffer. The forecasted effects of the economic downturn on the pricing and accessibility of the products are taken into account in the market insight reports and intelligence services provided by DBMR. With this, our clients can typically keep one step ahead of their competitors, project their sales and revenue, and estimate their profit and loss expenditures.

Recent Developments

• In June 2023, Qorvo, Inc. launched the QPB3810, a GaN-based power amplifier with integrated bias control, catering specifically to 5G massive MIMO applications. This amplifier promises enhanced efficiency and performance, addressing the growing demand for high-speed, high-capacity wireless communication systems
• In March 2023, Infineon Technologies revealed its intention to acquire GaN Systems for USD 830 million, aiming to bolster its GaN portfolio and solidify its position in the power system market. This strategic acquisition highlights Infineon's commitment to expanding its semiconductor offerings to meet the evolving needs of various industries
• En avril 2022, ROHM Semiconductor et Delta Electronics ont conclu une collaboration pour tirer parti de leur expertise en matière de technologie et de fabrication dans la production de masse de dispositifs d'alimentation à base de GaN. Cette initiative conjointe souligne l'engagement des entreprises à faire progresser le développement des systèmes d'alimentation et à établir une présence formidable sur le marché mondial, en particulier dans les secteurs exigeant des solutions d'alimentation hautes performances

Portée du marché des semi-conducteurs de puissance GaN et SiC

Le marché est segmenté en fonction du produit et de l'application. La croissance entre ces segments vous aidera à analyser les segments de croissance faibles dans les industries et à fournir aux utilisateurs un aperçu précieux du marché et des informations sur le marché pour les aider à prendre des décisions stratégiques pour identifier les principales applications du marché.

Produit

• Module d'alimentation SiC
• Module d'alimentation GaN
• SiC discret
• GaN discret

 Application

• Alimentations
• Entraînements de moteurs industriels
• Véhicule électrique hybride
• Onduleurs PV
• Traction
• Autres

Analyse/perspectives du marché des semi-conducteurs de puissance GaN et SiC

Le marché est analysé et la taille du marché, les informations sur le volume sont fournies par pays, produit et application comme référencé ci-dessus.

Les pays couverts dans le rapport de marché sont les États-Unis, le Canada, le Mexique, l'Allemagne, le Royaume-Uni, la France, l'Italie, l'Espagne, la Russie, la Pologne, la Suisse, les Pays-Bas, la Hongrie, l'Autriche, la Norvège, l'Irlande, la Turquie, la Lituanie, le reste de l'Europe, la Chine, le Japon, l'Inde, l'Australie, la Corée du Sud, Singapour, la Thaïlande, la Malaisie, l'Indonésie, les Philippines, le Vietnam, le reste de l'Asie-Pacifique, le Brésil, l'Argentine, le Pérou, le reste de l'Amérique du Sud, l'Afrique du Sud, l'Arabie saoudite, les Émirats arabes unis, Israël, le Koweït, l'Égypte et le reste du Moyen-Orient et de l'Afrique.

L'Amérique du Nord devrait dominer le marché grâce à l'essor des véhicules électriques, stimulé par les préoccupations environnementales et les mesures incitatives gouvernementales. Les investissements importants de la région dans la technologie 5G et le développement des infrastructures renforcent encore la demande de dispositifs GaN et SiC, car ils font partie intégrante des systèmes électroniques de puissance à haut rendement requis pour les véhicules électriques et l'infrastructure 5G.

L'Amérique du Nord devrait être la région connaissant la croissance la plus rapide du marché, stimulée par la demande croissante de véhicules électriques, de systèmes d'énergie renouvelable et d'applications industrielles. Des facteurs tels que les incitations gouvernementales, les réglementations favorables et l'accent mis sur la durabilité alimentent l'adoption des dispositifs GaN et SiC dans ces secteurs, propulsant ainsi la croissance du marché dans la région.

La section pays du rapport fournit également des facteurs d'impact sur les marchés individuels et des changements de réglementation sur le marché national qui ont un impact sur les tendances actuelles et futures du marché. Des points de données tels que l'analyse de la chaîne de valeur en aval et en amont, les tendances techniques et l'analyse des cinq forces de Porter, les études de cas sont quelques-uns des indicateurs utilisés pour prévoir le scénario de marché pour les différents pays. En outre, la présence et la disponibilité des marques mondiales et les défis auxquels elles sont confrontées en raison de la concurrence importante ou rare des marques locales et nationales, l'impact des tarifs nationaux et les routes commerciales sont pris en compte tout en fournissant une analyse prévisionnelle des données nationales.

Analyse du paysage concurrentiel et des parts de marché des semi-conducteurs de puissance GaN et SiC

Le paysage concurrentiel du marché fournit des détails par concurrent. Les détails inclus sont la présentation de l'entreprise, les finances de l'entreprise, les revenus générés, le potentiel du marché, les investissements dans la recherche et le développement, les nouvelles initiatives du marché, la présence régionale, les forces et les faiblesses de l'entreprise, le lancement du produit, la largeur et l'étendue du produit, la domination des applications. Les points de données ci-dessus fournis ne concernent que l'orientation des entreprises par rapport au marché.

Certains des principaux acteurs opérant sur le marché sont :

• Alpha et Omega Semiconductor (États-Unis)
• Fuji Electric Co., Ltd (Japon)
• Infineon Technologies AG (Allemagne)
• Littelfuse, Inc. (États-Unis)
• Microsemi (États-Unis)
• Mitsubishi Electric Corporation (Japon)
• Renesas Electronics Corporation (Japon)
• ROHM SEMICONDUCTOR (Japon)
• SANKEN ELECTRIC CO., LTD. (Japon)
• STMicroelectronics (Suisse/France)
• Epiluvac (Suède)
• IQE PLC (Royaume-Uni)
• Transphorm Inc. (États-Unis)
• SweGaN (Suède)
• Saint-Gobain (France)
• GeneSiC Semiconductor Inc. (États-Unis)
• Sublime Technologies (États-Unis)
• Groupe Global Power Technologies (États-Unis)
• DACO SEMICONDUCTEUR CO., LTD. (Taïwan)
• AGC Inc. (Japon)
• Dow (États-Unis)
• WeEn Semiconductors (Chine)

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