Frequently Asked Questions
The market is segmented based on North America SiC Power Semiconductor Market, By Type (MOSFETS, Hybrid Modules, Schottky Barrier Diodes (SBDS), IGBT, Bipolar Junction Transistor (BJT), Pin Diode, Junction FET (JFET), and Others), Voltage Range (301-900 V, 901-1700 V, and Above 1701 V), Wafer size (6 Inch, 4 Inch, 2 Inch, and Above 6 Inch), Wafer type (SiC Epitaxial Wafers, and Blank SiC Wafers), Application (Electric Vehicles (EV), Photovoltaics, Power Supplies, Industrial Motor Drives, EV Charging Infrastructure, RF Devices, and Others), Vertical (Automotive, Utilities and Energy, Industrial, Transportation, IT and Telecommunication, Consumer Electronics, Aerospace and Defense, Commercial, and Others) – Industry Trends and Forecast to 2031.
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The North America Sic Power Semiconductor Market size was valued at USD 258525.40 USD Thousand in 2023.
The North America Sic Power Semiconductor Market is projected to grow at a CAGR of 26.2% during the forecast period of 2024 to 2031.
The major players operating in the market include WOLFSPEED, STMicroelectronics , ROHM CO. , Fuji Electric Co. , Mitsubishi Electric Corporation , Texas Instruments ,orporated , Infineon Technologies AG , Semikron Danfoss , Renesas Electronics Corporation , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION , Microchip Technology , Semiconductor Components Industries, , NXP Semiconductors , UnitedSiC , SemiQ , Littelfuse, Allegro MicroSystems, Hitachi Power Semiconductor Device, GeneSiC Semiconductor among others.
The market report covers data from the U.S., Canada, and Mexico.
