Global Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market – Industry Trends and Forecast to 2029

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Global Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market – Industry Trends and Forecast to 2029

  • Semiconductors and Electronics
  • Upcoming Report
  • Oct 2022
  • Global
  • 350 Pages
  • No of Tables: 220
  • No of Figures: 60

Global Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market, By Type (Discrete IGBT, Modular IGBT), Power Rating (High- Power, Medium- Power, Low- Power), End- User (Automotive, Consumer Electronics, Communication, Industrial, Other End-Use Verticals) – Industry Trends and Forecast to 2029.

Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market

Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market Analysis and Size

Discrete semiconductor demand has increased significantly in recent years and is expected to increase further over the forecast period. The demand for high-energy, low-power devices is propelling the discrete semiconductor industry forward. Electronic manufacturers prefers components that are fast, compact, and capable of increasing product efficiency. These market growth determinants will contribute to the market's overall growth.

Data Bridge Market Research analyses that the Insulated gate bipolar transistor (IGBT) discrete semiconductor market which was growing at a value of 12.57 billion in 2021 and is expected to reach the value of USD 31.66 billion by 2029, at a CAGR of 11.30% during the forecast period of 2022-2029. In addition to the market insights such as market value, growth rate, market segments, geographical coverage, market players, and market scenario, the market report curated by the Data Bridge Market Research team includes in-depth expert analysis, import/export analysis, pricing analysis, production consumption analysis, and pestle analysis.

Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market Scope and Segmentation

Report Metric

Details

Forecast Period

2022 to 2029

Base Year

2021

Historic Years

2020 (Customizable to 2014 - 2019)

Quantitative Units

Revenue in USD Billion, Volumes in Units, Pricing in USD

Segments Covered

Type (Discrete IGBT, Modular IGBT), Power Rating (High- Power, Medium- Power, Low- Power), End- User (Automotive, Consumer Electronics, Communication, Industrial, Other End-Use Verticals),

Countries Covered

U.S., Canada and Mexico in North America, Germany, France, U.K., Netherlands, Switzerland, Belgium, Russia, Italy, Spain, Turkey, Rest of Europe in Europe, China, Japan, India, South Korea, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), Brazil, Argentina and Rest of South America as part of South America

Market Players Covered

ABB (Switzerland),  Semiconductor Components Industries, LLC (U.S.), Infineon Technologies AG (Germany), STMicroelectronics (Switzerland),  TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION (Japan), NXP Semiconductors (Netherlands), Diodes Incorporated (U.S.), Nexperia (Netherlands), Qualcomm Technologies Inc., (U.S.), D3 Semiconductor (U.S.), Eaton (Ireland), Hitachi Ltd. (Japan), Mitsubishi Electric Corporation (Japan),  Fuji Electric Co., Ltd. (U.S.), Murata Manufacturing Co. Ltd (Japan) and Taiwan Semiconductor Manufacturing Company Limited (Taiwan)

Opportunities

  • The increased development of AI-based semiconductors
  • The increase in R&D activities, combined with technological advancements

Market Definition

A discrete semiconductor device is a single silicon device that performs a basic electronic function. Among the discrete semiconductors are the Insulated Gate Bipolar Transistor (IGBT), MOSFETs, thyristors, diodes, and rectifiers. A power discrete semiconductor, most commonly an Insulated Gate Bipolar Transistor (IGBT) or a MOSFETS, is a component of electronic and electrical appliances that converts alternating current. Power discrete drives discrete semiconductors, which are used in a wide range of electronic applications, from consumer electronics to electric charging stations.

Global Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market Dynamics

Drivers

  • Growing need for sustainable devices

Rising demand for high-energy and power-efficient devices, as well as an increase in demand for green energy power generation drives, are expected to be the primary factors driving market growth. Furthermore, increased demand for MOSFETs and Insulated Gate Bipolar Transistor (IGBT) in electronics and automobiles, as well as ongoing demand for semiconductors from the automotive industry, help to cushion market growth over the forecasted period.

  • High demand for portable and consumer devices

New power semiconductors are highly specialised transistors that employ a variety of competing technologies such as GaN, SiC, and silicon. Because GaN and SiC are wide-bandgap technologies, they are more efficient and faster than silicon-based devices. Several manufacturers are introducing the next generation of power semiconductors based on gallium nitride (GaN) and silicon carbide (SiC).

The growing popularity of wireless and portable electronic devices is driving market growth. Furthermore, the increasing popularity of wireless and portable electronic products, strong demand from emerging economies, and rapid growth in the automotive industry all contribute to market growth. Demand for better and more efficient components from manufacturers of communications, consumer electronics, and other equipment is also a market driver.

Opportunities

  • High prevalence of AI based semiconductors

The increased development of AI-based semiconductors is expected to generate lucrative opportunities for the market, further expanding the discrete semiconductor market's future growth rate. Furthermore, increased R&D activities, combined with technological advancements in manufacturing techniques, will provide numerous opportunities for market growth.

Restraints

  • High cost and dearth of advancements

However, rising discrete semiconductor prices, a greater emphasis on integrated circuits, and a lack of technological advancement and development are the major restraints that will further challenge the Insulated Gate Bipolar Transistor (IGBT) discrete semiconductor market during the forecast period.

This insulated gate bipolar transistor (IGBT) discrete semiconductor market report provides details of new recent developments, trade regulations, import-export analysis, production analysis, value chain optimization, market share, impact of domestic and localized market players, analyses opportunities in terms of emerging revenue pockets, changes in market regulations, strategic market growth analysis, market size, category market growths, application niches and dominance, product approvals, product launches, geographic expansions, technological innovations in the market. To gain more info on the insulated gate bipolar transistor (IGBT) discrete semiconductor market contact Data Bridge Market Research for an Analyst Brief, our team will help you take an informed market decision to achieve market growth.

Impact and Current Market Scenario of Raw Material Shortage and Shipping Delays

Data Bridge Market Research offers a high-level analysis of the market and delivers information by keeping in account the impact and current market environment of raw material shortage and shipping delays. This translates into assessing strategic possibilities, creating effective action plans, and assisting businesses in making important decisions.

Apart from the standard report, we also offer in-depth analysis of the procurement level from forecasted shipping delays, distributor mapping by region, commodity analysis, production analysis, price mapping trends, sourcing, category performance analysis, supply chain risk management solutions, advanced benchmarking, and other services for procurement and strategic support.

COVID-19 Impact on Global Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market

The COVID-19 outbreak, on the other hand, has had a massive impact on the global and national economies. Many end-user industries, including discrete semiconductors, have been impacted. Work on the factory floor is a large part of the manufacturing of electronic components, where people are in close contact as they collaborate to increase productivity. Companies in the market are currently assessing the effects on three fronts: market demand, supply chain, and workforce. The product's demand is shifting across ASICS, memory, sensors, and so on, as consumer behaviour changes quickly and with future volatility. In addition, many businesses have postponed hardware upgrades and other long-term migration projects.

Expected Impact of Economic Slowdown on the Pricing and Availability of Products

When economic activity slows, industries begin to suffer. The forecasted effects of the economic downturn on the pricing and accessibility of the products are taken into account in the market insight reports and intelligence services provided by DBMR. With this, our clients can typically keep one step ahead of their competitors, project their sales and revenue, and estimate their profit and loss expenditures

Recent Development

  • In September 2020 Infineon Technologies AG will unveil its industry-leading 'TRENCHSTOP INSULATED GATE BIPOLAR TRANSISTOR (IGBT)7 technology', which is ideal for industrial motor drives, photovoltaics, power factor correction, and uninterruptible power supplies.
  • In July 2020 STMicroelectronics will release 26 new Schottky diodes with current ratings of 1-5 A and voltage ratings of 25-200 V in low-profile SBM and SMA flat packages. Due to their low voltage, these devices provide greater energy efficiency for consumer and industrial applications.

Global Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market Scope

The insulated gate bipolar transistor (IGBT) discrete semiconductor market is segmented on the basis of type, power rating and end-user. The growth amongst these segments will help you analyse meagre growth segments in the industries and provide the users with a valuable market overview and market insights to help them make strategic decisions for identifying core market applications.

Type

  • Discrete Insulated Gate Bipolar Transistor (IGBT)
  • Modular Insulated Gate Bipolar Transistor (IGBT)

Power rating

  • High- Power
  • Medium- Power
  • Low- Power

End users verticals

  • Automotive
  • Consumer Electronics
  • Communication
  • Industrial
  • Other End-Use Verticals

Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market Regional Analysis/Insights

The insulated gate bipolar transistor (IGBT) discrete semiconductor market is analysed and market size insights and trends are provided by country, type, power rating and end-user as referenced above.

The countries covered in the insulated gate bipolar transistor (IGBT) discrete semiconductor market report are U.S., Canada and Mexico in North America, Germany, France, U.K., Netherlands, Switzerland, Belgium, Russia, Italy, Spain, Turkey, Rest of Europe in Europe, China, Japan, India, South Korea, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), Brazil, Argentina and Rest of South America as part of South America.

North America region has been the dominating in the global Insulated Gate Bipolar Transistor (IGBT) discrete semiconductor market throughout the forecast period, accounting for the highest market shares. This is due to the increasing infusion of digital technologies into the mainstream, widespread adoption of digital pens, particularly in the educational sector, and the presence of key players in this region.

Asia-Pacific dominates the discrete semiconductor market because of the presence of semiconductor industries in China, Taiwan, South Korea, and India, as well as the increase in demand for green energy power generation drives and MOSFETs and Insulated Gate Bipolar Transistor (IGBT) in electronics and automobiles,

The country section of the report also provides individual market impacting factors and changes in market regulation that impact the current and future trends of the market. Data points like down-stream and upstream value chain analysis, technical trends and porter's five forces analysis, case studies are some of the pointers used to forecast the market scenario for individual countries. Also, the presence and availability of Global brands and their challenges faced due to large or scarce competition from local and domestic brands, impact of domestic tariffs and trade routes are considered while providing forecast analysis of the country data.   

Competitive Landscape and Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market Share Analysis

The insulated gate bipolar transistor (IGBT) discrete semiconductor market competitive landscape provides details by competitor. Details included are company overview, company financials, revenue generated, market potential, investment in research and development, new market initiatives, Global presence, production sites and facilities, production capacities, company strengths and weaknesses, product launch, product width and breadth, application dominance. The above data points provided are only related to the companies' focus related to insulated gate bipolar transistor (IGBT) discrete semiconductor market.

Some of the major players operating in the insulated gate bipolar transistor (IGBT) discrete semiconductor market are:

  • ABB (Switzerland)
  • Semiconductor Components Industries, LLC (U.S.)
  • Infineon Technologies AG (Germany)
  • STMicroelectronics (Switzerland)
  • TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION (Japan)
  • NXP Semiconductors (Netherlands)
  • Diodes Incorporated (U.S.)
  • Nexperia (Netherlands)
  • Qualcomm Technologies Inc., (U.S.)
  • D3 Semiconductor (U.S.)
  • Eaton (Ireland)
  • Hitachi Ltd. (Japan)
  • Mitsubishi Electric Corporation (Japan)
  • Fuji Electric Co., Ltd. (U.S.)
  • Murata Manufacturing Co. Ltd (Japan)
  • Taiwan Semiconductor Manufacturing Company Limited (Taiwan)


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Research Methodology

Data collection and base year analysis are done using data collection modules with large sample sizes. The stage includes obtaining market information or related data through various sources and strategies. It includes examining and planning all the data acquired from the past in advance. It likewise envelops the examination of information inconsistencies seen across different information sources. The market data is analysed and estimated using market statistical and coherent models. Also, market share analysis and key trend analysis are the major success factors in the market report. To know more, please request an analyst call or drop down your inquiry.

The key research methodology used by DBMR research team is data triangulation which involves data mining, analysis of the impact of data variables on the market and primary (industry expert) validation. Data models include Vendor Positioning Grid, Market Time Line Analysis, Market Overview and Guide, Company Positioning Grid, Patent Analysis, Pricing Analysis, Company Market Share Analysis, Standards of Measurement, Global versus Regional and Vendor Share Analysis. To know more about the research methodology, drop in an inquiry to speak to our industry experts.

Customization Available

Data Bridge Market Research is a leader in advanced formative research. We take pride in servicing our existing and new customers with data and analysis that match and suits their goal. The report can be customized to include price trend analysis of target brands understanding the market for additional countries (ask for the list of countries), clinical trial results data, literature review, refurbished market and product base analysis. Market analysis of target competitors can be analyzed from technology-based analysis to market portfolio strategies. We can add as many competitors that you require data about in the format and data style you are looking for. Our team of analysts can also provide you data in crude raw excel files pivot tables (Fact book) or can assist you in creating presentations from the data sets available in the report.

Frequently Asked Questions

The Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market size will be worth USD 31.66 billion by 2029.
The Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market growth rate will be 11.30% by 2029.
Growing need for sustainable devices and High demand for portable and consumer devices are the growth drivers of the Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market.
The type, power rating, and end-user are the factors on which the Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market research is based.
The major companies in the Insulated Gate Bipolar Transistor (IGBT) Discrete Semiconductor Market are ABB (Switzerland), Semiconductor Components Industries, LLC (U.S.), Infineon Technologies AG (Germany), STMicroelectronics (Switzerland), TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION (Japan), NXP Semiconductors (Netherlands), Diodes Incorporated (U.S.), Nexperia (Netherlands), Qualcomm Technologies Inc., (U.S.), D3 Semiconductor (U.S.), Eaton (Ireland), Hitachi Ltd. (Japan), Mitsubishi Electric Corporation (Japan), Fuji Electric Co., Ltd. (U.S.), Murata Manufacturing Co. Ltd (Japan) and Taiwan Semiconductor Manufacturing Company Limited (Taiwan).